Search for: All records

Ferroelectric domain walls (DWs) are nanoscale topological defects that can be easily tailored to create nanoscale devices. Their excitations, recently discovered to be responsible for GHz DW conductivity, hold promise for faster signal transmission and processing compared to the existing technology. Here we find that DW phonons have unprecedented dispersion going from GHz all the way to THz frequencies, and resulting in a surprisingly broad GHz signature in DW conductivity. Puzzling activation of nominally forbidden DW sliding modes in BiFeO₃is traced back to DW tilting and resulting asymmetry in wall-localized phonons. The obtained phonon spectra and selection rules are used to simulate scanning impedance microscopy, emerging as a powerful probe in nanophononics. The results will guide the experimental discovery of the predicted phonon branches and design of DW-based nanodevices operating in the technologically important frequency range.

Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high‐speed electronics, on the other hand, usually demand operation frequencies in the gigahertz (GHz) regime, where the effect of dipolar oscillation is important. Herein, an unexpected giant GHz conductivity on the order of 10³S m⁻¹is observed in certain BiFeO₃DWs, which is about 100 000 times greater than the carrier‐induced direct current (dc) conductivity of the same walls. Surprisingly, the nominal configuration of the DWs precludes the alternating current (ac) conduction under an excitation electric field perpendicular to the surface. Theoretical analysis shows that the inclined DWs are stressed asymmetrically near the film surface, whereas the vertical walls in a control sample are not. The resultant imbalanced polarization profile can then couple to the out‐of‐plane microwave fields and induce power dissipation, which is confirmed by the phase‐field modeling. Since the contributions from mobile‐carrier conduction and bound‐charge oscillation to the ac conductivity are equivalent in a microwave circuit, the research on local structural dynamics may open a new avenue to implement DW nano‐devices for radio‐frequency applications.